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 BD234
SILICON PNP TRANSISTOR
s s
SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR
DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.
3 2 1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CER V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 1K) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value -45 -45 -45 -5 -2 -6 25 -65 to 150 150 Unit V V V V A A W
o o
C C
May 1997
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BD234
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = -45 V V CB = -45 V V EB = -5 V I C = -100 mA I C = -1 A I C = -1 A I C = -150 mA I C = -1 A I C = -250 mA I C = -150 mA I B = -0.1 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -10 V V CE = -2 V 40 25 3 1.6 MHz -45 -0.6 -1.3 T c = 150 C
o
Min.
Typ.
Max. -0.1 -2 -1
Unit mA mA mA V V V
V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE h FE fT Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition frequency
h FE1 /h FE2 Matched Pairs
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BD234
SOT-32 (TO-126) MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629
DIM.
H2
0016114
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BD234
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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